Fujifilm has announced the successful development of a next-generation photoresist designed for semiconductor manufacturing that contains no per- and polyfluoroalkyl substances (PFAS), a group of environmentally persistent chemicals facing growing regulatory scrutiny.

The newly developed PFAS-free photoresist is a negative-tone ArF immersion-type resist capable of forming fine circuit patterns at the 28nm node with high yield. It is intended primarily for automotive-grade and industrial semiconductor applications. Fujifilm plans to accelerate commercialization based on customer evaluations.

A key innovation of the material is its ability to achieve both precise pattern formation and circuit defect suppression without relying on PFAS. The product demonstrates high acid reaction efficiency and enhanced hydrophobicity, significantly reducing water residue issues common in advanced ArF immersion processes. Performance has been jointly validated by imec, a leading semiconductor R&D institute based in Belgium.

At a press conference in Tokyo, Tetsu Iwasaki, Executive Managing Officer and General Manager of Fujifilm's Electronic Materials Business Division, stated: “We will continue to increase investments in growth fields, especially focusing our R&D on cutting-edge photoresists.” Senior Researcher Hitoshi Noguchi added, “As more device makers prioritize PFAS-free solutions, this breakthrough is expected to make a meaningful impact across the industry.”

Photoresists are essential materials in semiconductor fabrication, acting as the “paintbrush” for drawing microstructures on chips. The global market for photoresists is dominated by a few major players with strong technological and patent advantages. According to data from China-based research institute Qianzhan Industry Research, five companies—Shin-Etsu Chemical, JSR, DuPont, Tokyo Ohka Kogyo, and Sumitomo Chemical—account for over 85% of the global market share (CR5).

Driven by the rapid growth of China's semiconductor industry, domestic photoresist manufacturers have made significant progress in recent years. Some have achieved import substitution in mid- to low-end segments and are now pushing into higher-end applications. For example, Beijing Kehua has achieved volume production of KrF resists and is developing EUV photoresists; Nata Opto-Electronic has made breakthroughs in ArF resists, with small-batch orders for its dry-type ArF products; and Shanghai Sinyang has also reported notable advances in ArF technology, targeting limited sales in 2025.

Despite these developments, Chinese photoresist makers still face a considerable gap compared to international leaders in terms of technical capabilities, product quality, and market share. Continued R&D investment will be critical to improving competitiveness in the high-end segment of this strategically important material.