On May 16, China Resources Microelectronics Limited (CR Micro) held a ceremony in Dalian, China to celebrate the shipment of 100 million gallium nitride (GaN) chips and mark the commissioning of its new epitaxy production base. The event, themed “Milestone of 100 Million Chips, Smarter New Journey,” highlighted CR Micro's rapid progress in the GaN sector and its strategic commitment to third-generation semiconductors.

The ceremony was attended by CR Micro Vice President Zhuang Hengqian, Power Device Business Group General Manager Li Chao, Runxin Microelectronics General Manager Liang Huinan, officials from the Dalian High-Tech Zone, industry partners, investors, and employee representatives.

The company celebrated the milestone of delivering 100 million GaN chips—a significant achievement signaling a new phase of growth. The new epitaxy facility, completed in just nine months, features advanced process technologies and aims to become a leading domestic and internationally competitive GaN epitaxy production hub.

In a keynote speech, Zhuang Hengqian, Vice President of CR Micro, expressed his sincere appreciation to the Dalian High-Tech Zone government, investment institutions, and long-standing partners for their strong support of CR Micro and Runxin Microelectronics. He introduced CR Micro’s strategic layout and technical strengths in the third-generation semiconductor sector, highlighting that Runxin Microelectronics is a critical pillar in the company’s GaN roadmap. Zhuang emphasized that the completion of the new epitaxy production base marks a major milestone in expanding CR Micro’s GaN capabilities.

With the backing of CR Micro's IDM full-industry-chain resources, Runxin Micro has built a complete technology chain from epitaxial material development to device process optimization. It has successfully partnered with leading customers in power management, significantly boosting its market visibility and brand influence.

Guo Xiangyu, Deputy Director of the Dalian High-Tech Zone Administrative Committee, welcomed CR Micro's investment in Dalian, China, and expressed hopes that the company will continue driving innovation in the semiconductor industry and contribute to the region's emerging technology ecosystem.

Attendees also toured the new production lines to gain a closer look at the facility layout and process flow. The site is expected to enhance CR Micro's vertical integration and reinforce its competitive edge in epitaxial manufacturing.

Looking ahead, CR Micro plans to increase R&D investment and further strengthen its presence in wide bandgap semiconductors. The company aims to meet the rising demand for high-performance epitaxial wafers and support the expansion of China's high-end semiconductor capabilities. It also intends to deepen collaboration across the value chain to solve technological bottlenecks, optimize the industrial ecosystem, and advance the coordinated growth of the semiconductor industry.

Through this expanded investment in GaN, CR Micro is positioning itself to play a greater role in the development of third-generation semiconductors and support China's long-term goals of technological self-reliance and innovation leadership.